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Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

机译：BSIM6 MOSFET模型中阈值电压的分析建模和实验验证

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摘要

In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.

机译：本文建立了体MOSFET阈值电压的解析模型。该模型是从BSIM6 MOSFET模型的基于物理电荷的核心派生而来的，同时考虑了短沟道效应，旨在用于商用SPICE模拟器中以获取工作点信息。使用各种流行的阈值电压提取技术，使用来自IBM 90纳米技术节点的测量数据对模型进行了验证，并获得了良好的一致性。

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作者
Agarwal, Harshit; Gupta, Chetan; Kushwaha, Pragya; Yadav, Chandan; Duarte, Juan P; Khandelwal, Sourabh; Hu, Chenming; Chauhan, Yogesh S;
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年度 2015
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正文语种 eng
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专利

1. Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model [J] . Agarwal Harshit, Gupta Chetan, Kushwaha Pragya, Electron Devices Society, IEE . 2015,第3期

机译：BSIM6 MOSFET模型中阈值电压的分析建模和实验验证
2. Analytical Modeling of Threshold Voltage and Drain-Induced-Barrier- Lowering Variations Due to Gate Length Fluctuation in Nanometer MOSFETs [J] . Lü Weifeng, Wang Guangyi, Lin Mi, Recent advances in electrical & electronic engineering . 2017,第2期

机译：纳米MOSFET中栅极长度波动引起的阈值电压和漏极沟槽降低变化的分析建模
3. 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs [J] . Ekta Goel, Sanjay Kumar, Kunal Singh, IEEE Transactions on Electron Devices . 2016,第3期

机译：渐变通道双材料双栅极MOSFET阈值电压的二维分析建模
4. Modeling of high voltage LDMOSFET using industry standard BSIM6 MOS model [C] . Chetan Gupta, Harshit Agarwal, Yogesh S. Chauhan, IEEE International Conference on Electron Devices and Solid-State Circuits . 2016

机译：使用行业标准BSIM6 MOS模型建模高压LDMOSFET
5. Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions. [D] . Ashraf, Nabil Shovon. 2011

机译：45 nm栅极长度n-MOSFET陷阱引起的阈值电压波动仿真的比较分析和分析模型预测。
6. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime [O] . Yasuhisa Omura 2019

机译：面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
7. An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates [O] . Bhushan Shiv 2013

机译：硅锗（SiGe）衬底上带有应变硅（s-Si）沟道的短沟道双材料栅极（DMG）MOSFET阈值电压的分析模型
8. Development and Experimental Verification of a Two-Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFETs [R] . Ramirez, J. C., McNally, P. J., Cooper, L. S., 1988

机译：Gaas mEsFET中压电感应阈值电压漂移的二维数值模型的开发与实验验证

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

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